| 2019 | A Band-Engineered One-Transistor DRAM With Improved Data Retention and Power Efficiency | 신형순 | Article |
| 2016 | A new bias scheme for a low power consumption ReRAM crossbar array | 신형순; 선우경 | Article |
| 2016 | A Survey on the Modeling of Magnetic Tunnel Junctions for Circuit Simulation | 신형순; 이승준 | Review |
| 2023 | A Unified Current-Voltage Model for Metal Oxide-Based Resistive Random-Access Memory | 신형순; 박지선 | Article |
| 2023 | An Area-Efficient Integrate-and-Fire Neuron Circuit with Enhanced Robustness against Synapse Variability in Hardware Neural Network | 신형순; 박지선; 조성재 | Article |
| 2020 | Analysis of a Lateral Grain Boundary for Reducing Performance Variations in Poly-Si 1T-DRAM | 신형순 | Article |
| 2019 | Analysis of operation characteristics of junctionless poly-Si 1T-DRAM in accumulation mode | 신형순; 선우경 | Article |
| 2020 | Analysis of Organic Light-Emitting Diode SPICE Models with Constant or Voltage-Dependent Components | 신형순; 박지선 | Article |
| 2018 | Analysis of Read Margin and Write Power Consumption of a 3-D vertical RRAM (VRRAM) Crossbar Array | 신형순; 선우경 | Article |
| 2015 | Analysis of stress-induced mobility enhancement on (100)-oriented single- and double-gate n-MOSFETs using silicon-thickness- dependent deformation potential | 신형순 | Article |
| 2019 | Analysis of the Memristor-Based Crossbar Synapse for Neuromorphic Systems | 신형순; 선우경 | Article |
| 2020 | Analysis of the Sensing Margin of Silicon and Poly-Si 1T-DRAM | 신형순; 선우경 | Article |
| 2016 | Analysis of the substantial reduction of strain-induced mobility enhancement in (110)-oriented ultrathin double-gate MOSFETs | 신형순 | Article |
| 2021 | Analysis of the transient body effect model for an LTPS TFT on a plastic substrate | 신형순; 박지선 | Article |
| 2016 | Anomalous capacitance characteristics of TFTs with LDD structures in the saturation region | 신형순 | Article |
| 2020 | Charge Based Current-Voltage Model for the Silicon on Insulator Junctionless Field-Effect Transistor | 신형순; 박지선 | Article |
| 2021 | Circuit Optimization Method to Reduce Disturbances in Poly-Si 1T-DRAM | 신형순; 박지선 | Article |
| 2023 | Dependency of Spiking Behaviors of an Integrate-and-fire Neuron Circuit on Shunt Capacitor | 신형순; 조성재 | Article |
| 2020 | Effect of Initial Synaptic State on Pattern Classification Accuracy of 3D Vertical Resistive Random Access Memory (VRRAM) Synapses | 신형순; 선우경 | Article |
| 2019 | Fabrication and Characterization of a Thin-Body Poly-Si 1T DRAM With Charge-Trap Effect | 신형순; 선우경 | Article |
| 2019 | Memristor Neural Network Training with Clock Synchronous Neuromorphic System | 신형순; 박준희; 선우경 | Article |
| 2020 | Multibit-Generating Pulsewidth-Based Memristive-PUF Structure and Circuit Implementation | 신형순 | Article |
| 2018 | New modeling method for the dielectric relaxation of a DRAM cell capacitor | 신형순; 선우경 | Article; Proceedings Paper |
| 2021 | New Simulation Method for Dependency of Device Degradation on Bending Direction and Channel Length | 신형순; 박지선 | Article |
| 2020 | Optimization Considerations for Short Channel Poly-Si 1T-DRAM | 신형순; 선우경 | Article |
| 2018 | Read margin analysis of crossbar arrays using the cell-variability-aware simulation method | 신형순; 선우경 | Article; Proceedings Paper |
| 2021 | Selected Bit-Line Current PUF: Implementation of Hardware Security Primitive Based on a Memristor Crossbar Array | 신형순 | Article |
| 2016 | Switching Time and Stability Evaluation for Writing Operation of STT-MRAM Crossbar Array | 신형순; 이승준 | Article |
