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Analysis of stress-induced mobility enhancement on (100)-oriented single- and double-gate n-MOSFETs using silicon-thickness- dependent deformation potential

Title
Analysis of stress-induced mobility enhancement on (100)-oriented single- and double-gate n-MOSFETs using silicon-thickness- dependent deformation potential
Authors
Choi, SujinSun, WookyungShin, Hyungsoon
Ewha Authors
신형순
SCOPUS Author ID
신형순scopus
Issue Date
2015
Journal Title
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN
0268-1242JCR Link1361-6641JCR Link
Citation
vol. 30, no. 4
Keywords
mobility enhancementuniaxial straindeformation potentialsilicon thicknesssingle gatedouble gate
Publisher
IOP PUBLISHING LTD
Indexed
SCI; SCIE; SCOPUS WOS
Abstract
The stress effect in uniaxially strained single- and double-gate silicon-on-insulator n-type metal oxide-semiconductor field effect transistors (MOSFETs) with a (100) wafer orientation is analyzed. A model of silicon-thickness-dependent deformation potential (Dac-TSi) is introduced to accurately calculate the mobility using a Schrodinger-Poisson solver. Simulation results using the Dac-TSi model exhibit excellent agreement with the measured mobility for both the unstrained and strained conditions. Electron mobility enhancements with longitudinal and transverse tensile stress conditions are simulated as a function of silicon thickness. The mobility enhancement in the single-gate case has one peak point, whereas it produces two peak points in the double-gate case. An in-depth analysis reveals that this phenomenon results from the hump in the energy difference between the Delta 2 and Delta 4 valleys, which in turn results from the volume inversion in the double gate.
DOI
10.1088/0268-1242/30/4/045009
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엘텍공과대학 > 전자공학과 > Journal papers
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