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Charge Based Current-Voltage Model for the Silicon on Insulator Junctionless Field-Effect Transistor
- Title
- Charge Based Current-Voltage Model for the Silicon on Insulator Junctionless Field-Effect Transistor
- Authors
- Jeong, Yongjin; Kang, In Man; Cho, Seongjae; Park, Jisun; Shin, Hyungsoon
- Ewha Authors
- 신형순; 박지선
- SCOPUS Author ID
- 신형순; 박지선
- Issue Date
- 2020
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- ISSN
- 1533-4880
1533-4899
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY vol. 20, no. 8, pp. 4920 - 4925
- Keywords
- Junctionless Field-Effect Transistor (JLFET); Silicon on Insulator Junctionless Field-Effect Transistor (SOI-JLFET); Charge-Based; Current-Voltage Model; Current Model; Circuit Simulation
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Indexed
- SCIE; SCOPUS
- Document Type
- Article
- Abstract
- In this study, we propose an accurate and simple current voltage model for an SOI-JLFET based on a solution of the Poisson equation. The model is divided into three regions: accumulation, accumulation depletion, and depletion. The charge density in each region is calculated with the Poisson equation and region-specific boundary conditions, and then the current is obtained by integrating the charge density with consideration of the v(ds) effect. The proposed model, which was implemented in HSPICE using Verilog-A, was validated using TCAD simulation for various physical conditions such as SOI channel thickness, gate oxide thickness, and channel doping concentration type. According to simulation results by the error rate calculation, our model shows more than 90% accuracy.
- DOI
- 10.1166/jnn.2020.17795
- Appears in Collections:
- 공과대학 > 전자전기공학전공 > Journal papers
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