2016 | Analysis of the substantial reduction of strain-induced mobility enhancement in (110)-oriented ultrathin double-gate MOSFETs | 신형순 | Article |
2004 | Analysis of the T-Si-dependent subthreshold characteristics in lightly-doped asymmetric double-gate MOSFETs | 신형순 | Article; Proceedings Paper |
2021 | Analysis of hump effect in tensile-stressed a-IGZO TFT using TCAD simulation | 신형순 | Conference Paper |
2014 | Substrate doping concentration dependence of electron mobility enhancement in uniaxial strained (110)/<110> nMOSFETs | 신형순 | Article |
2018 | New modeling method for the dielectric relaxation of a DRAM cell capacitor | 신형순; 선우경 | Article; Proceedings Paper |
2018 | Read margin analysis of crossbar arrays using the cell-variability-aware simulation method | 신형순; 선우경 | Article; Proceedings Paper |
2004 | A unified mobility model for quantum mechanical simulation of MOSFETs | 신형순 | Article; Proceedings Paper |
2016 | Guideline model for the bias-scheme-dependent power consumption of a resistive random access memory crossbar array | 신형순 | Article |
2016 | ReRAM crossbar array: Reduction of access time by reducing the parasitic capacitance of the selector device | 신형순 | Article |
2014 | Advanced circuit-level model for temperature-sensitive read/write operation of a magnetic tunnel junction | 신형순; 이승준 | Article |