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Analysis of the T-Si-dependent subthreshold characteristics in lightly-doped asymmetric double-gate MOSFETs

Title
Analysis of the T-Si-dependent subthreshold characteristics in lightly-doped asymmetric double-gate MOSFETs
Authors
Lee, HShin, H
Ewha Authors
신형순
SCOPUS Author ID
신형순scopus
Issue Date
2004
Journal Title
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
ISSN
0374-4884JCR Link
Citation
vol. 44, no. 1, pp. 56 - 59
Keywords
double-gate MOSFETsubthreshold characteristicsvolume inversion
Publisher
KOREAN PHYSICAL SOC
Indexed
SCI; SCIE; SCOPUS; KCI WOS scopus
Abstract
The subthreshold characteristics of double-gate (DG) MOSFETs with various thicknesses of a Si film (T-Si) are analyzed. It is found that, in comparison to the symmetrical DG-MOSFET, the subthreshold characteristics of the lightly-doped asymmetric device have a larger dependence on T-Si, which is due to the linear distribution of the potential in the Si-film region. Further, we derive an analytical equation which can explain these phenomena and verify the accuracy of the analytical equation by comparing them with the device simulation results. Due to these T-Si-sensitive subthreshold characteristics, tight control of T-Si is required for lightly-doped asymmetric DG-MOSFETs to keep a large I-on/O-off ratio.
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엘텍공과대학 > 전자공학과 > Journal papers
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