Results 1-8 of 8 (Search time: 0.0 seconds).
Issue Date | Title | Author(s) | Type |
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2004 | Analysis of the T-Si-dependent subthreshold characteristics in lightly-doped asymmetric double-gate MOSFETs | 신형순 | Article; Proceedings Paper |
2004 | A unified mobility model for quantum mechanical simulation of MOSFETs | 신형순 | Article; Proceedings Paper |
2004 | Analysis of 2-D quantum effects in the poly-gate and their impact on the short-channel effects in double-gate MOSFETs via the density-gradient method | 신형순 | Article |
2004 | A novel sensing circuit for high speed synchronous magneto-resistive RAM | 신형순; 이승준 | Conference Paper |
2004 | A sensing circuit for MRAM based on 2MTJ-2T structure | 신형순; 이승준 | Article |
2004 | A new weight redistribution technique for electron-electron scattering in the MC simulation | 신형순 | Article |
2004 | An Efficient Method Including the Non-Quasistatic Effect for Frequency-Domain Simulation of Short Channel MOSFETs | 신형순 | Conference Paper |
2004 | Evanescent-Mode Analysis of Short-Channel Effects in MOSFETs | 신형순 | Conference Paper |