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공과대학
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Results 1-10 of 96 (Search time: 0.0 seconds).
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Issue Date
Title
Author(s)
Type
2015
Investigation of power dissipation for ReRAM in crossbar array architecture
신형순
Conference Paper
2002
An anomalous device degradation of SOI narrow width devices caused by STI edge influence
신형순
Article
2001
Low-frequency noise degradation caused by STI interface effects in SOI-MOSFETs
신형순
Article
2002
New method to extract the lateral profile of hot-carrier-induced nits by using the charge pumping method
신형순
Conference Paper
2002
Analysis of the accuracy of the local thermal noise sources for the impedance field method using the Monte Carlo method
신형순
Conference Paper
1996
Unified model for junction size, substrate doping, and energy dependence of α-particle-induced charge collection
신형순
Article
2001
Three-dimensional simulation of discrete oxide charge effects in 0.1 μm MOSFETs
신형순
Article
2016
Analysis of the substantial reduction of strain-induced mobility enhancement in (110)-oriented ultrathin double-gate MOSFETs
신형순
Article
2004
Analysis of the T-Si-dependent subthreshold characteristics in lightly-doped asymmetric double-gate MOSFETs
신형순
Article; Proceedings Paper
2021
Analysis of hump effect in tensile-stressed a-IGZO TFT using TCAD simulation
신형순
Conference Paper
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-Subject
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crossbar array
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grain boundary
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memristor
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polysilicon
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read margin
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1T-DRAM
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capacitorless one-transistor dyna...
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bias scheme
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hardware security
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2020 - 2023
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2010 - 2019
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