| 2016 | A new bias scheme for a low power consumption ReRAM crossbar array | 신형순; 선우경 | Article |
| 2020 | A Novel Hardware Security Architecture for IoT Device: PD-CRP (PUF Database and Challenge-Response Pair) Bloom Filter on Memristor-Based PUF | 선우경; 이정원 | Article |
| 2023 | A Unified Current-Voltage Model for Metal Oxide-Based Resistive Random-Access Memory | 신형순; 박지선 | Article |
| 2020 | Analysis of a Lateral Grain Boundary for Reducing Performance Variations in Poly-Si 1T-DRAM | 신형순 | Article |
| 2019 | Analysis of operation characteristics of junctionless poly-Si 1T-DRAM in accumulation mode | 신형순; 선우경 | Article |
| 2018 | Analysis of Read Margin and Write Power Consumption of a 3-D vertical RRAM (VRRAM) Crossbar Array | 신형순; 선우경 | Article |
| 2015 | Analysis of stress-induced mobility enhancement on (100)-oriented single- and double-gate n-MOSFETs using silicon-thickness- dependent deformation potential | 신형순 | Article |
| 2019 | Analysis of the Memristor-Based Crossbar Synapse for Neuromorphic Systems | 신형순; 선우경 | Article |
| 2020 | Analysis of the Sensing Margin of Silicon and Poly-Si 1T-DRAM | 신형순; 선우경 | Article |
| 2016 | Analysis of the substantial reduction of strain-induced mobility enhancement in (110)-oriented ultrathin double-gate MOSFETs | 신형순 | Article |
| 2016 | Anomalous capacitance characteristics of TFTs with LDD structures in the saturation region | 신형순 | Article |
| 2021 | Circuit Optimization Method to Reduce Disturbances in Poly-Si 1T-DRAM | 신형순; 박지선 | Article |
| 2020 | Effect of Initial Synaptic State on Pattern Classification Accuracy of 3D Vertical Resistive Random Access Memory (VRRAM) Synapses | 신형순; 선우경 | Article |
| 2019 | Fabrication and Characterization of a Thin-Body Poly-Si 1T DRAM With Charge-Trap Effect | 신형순; 선우경 | Article |
| 2019 | Memristor Neural Network Training with Clock Synchronous Neuromorphic System | 신형순; 박준희; 선우경 | Article |
| 2020 | Multibit-Generating Pulsewidth-Based Memristive-PUF Structure and Circuit Implementation | 신형순 | Article |
| 2018 | New modeling method for the dielectric relaxation of a DRAM cell capacitor | 신형순; 선우경 | Article; Proceedings Paper |
| 2018 | Read margin analysis of crossbar arrays using the cell-variability-aware simulation method | 신형순; 선우경 | Article; Proceedings Paper |
| 2021 | Selected Bit-Line Current PUF: Implementation of Hardware Security Primitive Based on a Memristor Crossbar Array | 신형순 | Article |
| 2019 | Three-Dimensional (3D) Vertical Resistive Random-Access Memory (VRRAM) Synapses for Neural Network Systems | 박준희; 선우경 | Article |
