2019 | Three-Dimensional (3D) Vertical Resistive Random-Access Memory (VRRAM) Synapses for Neural Network Systems | 박준희; 선우경 | Article |
2018 | New modeling method for the dielectric relaxation of a DRAM cell capacitor | 신형순; 선우경 | Article; Proceedings Paper |
2018 | Read margin analysis of crossbar arrays using the cell-variability-aware simulation method | 신형순; 선우경 | Article; Proceedings Paper |
2020 | Effect of Initial Synaptic State on Pattern Classification Accuracy of 3D Vertical Resistive Random Access Memory (VRRAM) Synapses | 신형순; 선우경 | Article |
2020 | Analysis of the Sensing Margin of Silicon and Poly-Si 1T-DRAM | 신형순; 선우경 | Article |
2020 | Optimization Considerations for Short Channel Poly-Si 1T-DRAM | 신형순; 선우경 | Article |
2018 | Analysis of Read Margin and Write Power Consumption of a 3-D vertical RRAM (VRRAM) Crossbar Array | 신형순; 선우경 | Article |
2016 | A new bias scheme for a low power consumption ReRAM crossbar array | 신형순; 선우경 | Article |
2019 | Analysis of operation characteristics of junctionless poly-Si 1T-DRAM in accumulation mode | 신형순; 선우경 | Article |
2017 | The effect of a source-contacted light shield on the electrical characteristics of an LTPS TFT | 신형순; 선우경 | Article |