2D-materials for analog in-memory computing: a device-centric review of advantages and limitations

Abstract

This review examines the practical advantages of two-dimensional materials for energy-efficient in-memory computing by assembling a curated, experiment-only dataset covering 32 material systems across diverse device structures, mechanisms, and fabrication routes. Energy analysis was standardized using an averaged pulse-based metric, and key figures of merit—switching energy, on/off ratio, endurance, retention, and linearity—were compared against structural and mechanistic factors. Two low-energy-consumption design pathways emerge: ultrathin (<10 nm) two-terminal devices exploiting filament formation for sub-μs updates and three-terminal heterojunction devices leveraging charge trapping to achieve nA-level programming currents over longer timescales. However, dynamic on/off ratios remain modest and are often overstated by DC sweep data. Endurance improves with shorter switching times, and the most intrinsically linear conductance evolution is observed in three-terminal gate-controlled devices employing charge trapping, Schottky barrier modulation, or ion intercalation. No universal optimum exists, as enhancing one performance metric typically compromises another. Based on the comparative analysis presented in this review, three near-term levers emerge as particularly relevant for translating selective material advantages into reproducible system-level gains: standardized pulsed benchmarking, scalable chemical vapor deposition growth with controlled defects and interfaces, and device-circuit co-design. © 2026 The Author(s). Published by IOP Publishing Ltd.