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Uniform multilevel switching and synaptic properties in RF-sputtered InGaZnO-based memristor treated with oxygen plasma

Title
Uniform multilevel switching and synaptic properties in RF-sputtered InGaZnO-based memristor treated with oxygen plasma
Authors
MahataChandreswarSoHyojinYangSeyeongIsmailMuhammadKimSungjunChoSeongjae
Ewha Authors
조성재
SCOPUS Author ID
조성재scopus
Issue Date
2023
Journal Title
Journal of Chemical Physics
ISSN
0021-9606JCR Link
Citation
Journal of Chemical Physics vol. 159, no. 18
Publisher
American Institute of Physics Inc.
Indexed
SCIE; SCOPUS WOS scopus
Document Type
Article
Abstract
Bipolar gradual resistive switching was investigated in ITO/InGaZnO/ITO resistive switching devices. Controlled intrinsic oxygen vacancy formation inside the switching layer enabled the establishment of a stable multilevel memory state, allowing for RESET voltage control and non-degradable data endurance. The ITO/InGaZnO interface governs the migration of oxygen ions and redox reactions within the switching layer. Voltage-stress-induced electron trapping and oxygen vacancy formation were observed before conductive filament electroforming. This device mimicked biological synapses, demonstrating short- and long-term potentiation and depression through electrical pulse sequences. Modulation of post-synaptic currents and pulse frequency-dependent short-term potentiation were successfully emulated in the InGaZnO-based artificial synapse. The ITO/InGaZnO/ITO memristor exhibited spike-amplitude-dependent plasticity, spike-rate-dependent plasticity, and potentiation-depression synaptic learning with low energy consumption, making it a promising candidate for large-scale integration. © 2023 Author(s).
DOI
10.1063/5.0179314
Appears in Collections:
공과대학 > 전자전기공학전공 > Journal papers
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