Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 조성재 | * |
dc.date.accessioned | 2024-02-15T05:11:56Z | - |
dc.date.available | 2024-02-15T05:11:56Z | - |
dc.date.issued | 2023 | * |
dc.identifier.issn | 0021-9606 | * |
dc.identifier.other | OAK-34398 | * |
dc.identifier.uri | https://dspace.ewha.ac.kr/handle/2015.oak/267807 | - |
dc.description.abstract | Bipolar gradual resistive switching was investigated in ITO/InGaZnO/ITO resistive switching devices. Controlled intrinsic oxygen vacancy formation inside the switching layer enabled the establishment of a stable multilevel memory state, allowing for RESET voltage control and non-degradable data endurance. The ITO/InGaZnO interface governs the migration of oxygen ions and redox reactions within the switching layer. Voltage-stress-induced electron trapping and oxygen vacancy formation were observed before conductive filament electroforming. This device mimicked biological synapses, demonstrating short- and long-term potentiation and depression through electrical pulse sequences. Modulation of post-synaptic currents and pulse frequency-dependent short-term potentiation were successfully emulated in the InGaZnO-based artificial synapse. The ITO/InGaZnO/ITO memristor exhibited spike-amplitude-dependent plasticity, spike-rate-dependent plasticity, and potentiation-depression synaptic learning with low energy consumption, making it a promising candidate for large-scale integration. © 2023 Author(s). | * |
dc.language | English | * |
dc.publisher | American Institute of Physics Inc. | * |
dc.title | Uniform multilevel switching and synaptic properties in RF-sputtered InGaZnO-based memristor treated with oxygen plasma | * |
dc.type | Article | * |
dc.relation.issue | 18 | * |
dc.relation.volume | 159 | * |
dc.relation.index | SCIE | * |
dc.relation.index | SCOPUS | * |
dc.relation.journaltitle | Journal of Chemical Physics | * |
dc.identifier.doi | 10.1063/5.0179314 | * |
dc.identifier.wosid | WOS:001104453300003 | * |
dc.identifier.scopusid | 2-s2.0-85176591014 | * |
dc.author.google | Mahata | * |
dc.author.google | Chandreswar | * |
dc.author.google | So | * |
dc.author.google | Hyojin | * |
dc.author.google | Yang | * |
dc.author.google | Seyeong | * |
dc.author.google | Ismail | * |
dc.author.google | Muhammad | * |
dc.author.google | Kim | * |
dc.author.google | Sungjun | * |
dc.author.google | Cho | * |
dc.author.google | Seongjae | * |
dc.contributor.scopusid | 조성재(13607031400) | * |
dc.date.modifydate | 20240322130739 | * |