View : 50 Download: 0

Full metadata record

DC Field Value Language
dc.contributor.author신형순-
dc.contributor.author박지선-
dc.date.accessioned2021-11-10T16:31:19Z-
dc.date.available2021-11-10T16:31:19Z-
dc.date.issued2021-
dc.identifier.issn1996-1944-
dc.identifier.otherOAK-30429-
dc.identifier.uriD:/dspace/dspace55/handle/2015.oak/259401-
dc.description.abstractThe dependency of device degradation on bending direction and channel length is analyzed in terms of bandgap states in amorphous indium-gallium-zinc-oxide (a-IGZO) films. The strain distribution in an a-IGZO film under perpendicular and parallel bending of a device with various channel lengths is investigated by conducting a three-dimensional mechanical simulation. Based on the obtained strain distribution, new device simulation structures are suggested in which the active layer is defined as consisting of multiple regions. The different arrangements of a highly strained region and density of states is proportional to the strain account for the measurement tendency. The analysis performed using the proposed structures reveals the causes underlying the effects of different bending directions and channel lengths, which cannot be explained using the existing simulation methods in which the active layer is defined as a single region. © 2021 by the authors. Licensee MDPI, Basel, Switzerland.-
dc.languageEnglish-
dc.publisherMDPI-
dc.subjectAmorphous indium-gallium-zinc-oxide (a-IGZO)-
dc.subjectBending stress-
dc.subjectChannel length dependency-
dc.subjectDevice simulation-
dc.subjectFlexible thin-film transistor (TFT)-
dc.subjectOxide TFT-
dc.subjectStrain simulation-
dc.titleNew simulation method for dependency of device degradation on bending direction and channel length-
dc.typeArticle-
dc.relation.issue20-
dc.relation.volume14-
dc.relation.indexSCIE-
dc.relation.indexSCOPUS-
dc.relation.journaltitleMaterials-
dc.identifier.doi10.3390/ma14206167-
dc.identifier.scopusid2-s2.0-85117603572-
dc.author.googleChoi Y.-
dc.author.googlePark J.-
dc.author.googleShin H.-
dc.contributor.scopusid신형순(7404012125)-
dc.contributor.scopusid박지선(56095689300)-
dc.date.modifydate20211116100813-
Appears in Collections:
엘텍공과대학 > 전자공학과 > Journal papers
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE