View : 100 Download: 0
Modeling and Understanding the Compact Performance of h-BN Dual-Gated ReS2 Transistor
- Modeling and Understanding the Compact Performance of h-BN Dual-Gated ReS2 Transistor
- Lee K.; Choi J.; Kaczer B.; Grill A.; Lee J.W.; Van Beek S.; Bury E.; Diaz-Fortuny J.; Chasin A.; Lee J.; Chun J.; Shin D.H.; Na J.; Cho H.; Lee S.W.; Kim G.-T.
- Ewha Authors
- SCOPUS Author ID
- Issue Date
- Journal Title
- Advanced Functional Materials
- Advanced Functional Materials vol. 31, no. 23
- 2D materials; defects; dual-gate ReS2; field-effect transistors; hexagonal boron nitride
- John Wiley and Sons Inc
- SCIE; SCOPUS
- Document Type
Show the fulltext
- In this study, high-performance few-layered ReS2 field-effect transistors (FETs), fabricated with hexagonal boron nitride (h-BN) as top/bottom dual gate dielectrics, are presented. The performance of h-BN dual gated ReS2 FET having a trade-off of performance parameters is optimized using a compact model from analytical choice maps, which consists of three regions with different electrical characteristics. The bottom h-BN dielectric has almost no defects and provides a physical distance between the traps in the SiO2 and the carriers in the ReS2 channel. Using a compact analyzing model and structural advantages, an excellent and optimized performance is introduced consisting of h-BN dual-gated ReS2 with a high mobility of 46.1 cm2 V−1 s−1, a high current on/off ratio of ≈106, a subthreshold swing of 2.7 V dec−1, and a low effective interface trap density (Nt,eff) of 7.85 × 1010 cm−2 eV−1 at a small operating voltage (<3 V). These phenomena are demonstrated through not only a fundamental current–voltage analysis, but also technology computer aided design simulations, time-dependent current, and low-frequency noise analysis. In addition, a simple method is introduced to extract the interlayer resistance of ReS2 channel through Y-function method as a function of constant top gate bias. © 2021 Wiley-VCH GmbH
- Appears in Collections:
- 자연과학대학 > 물리학전공 > Journal papers
- Files in This Item:
There are no files associated with this item.
- RIS (EndNote)
- XLS (Excel)
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.