Local structural and electrical properties of ferroelectric bi325la0ti3o12 thin films on pt

Abstract

Ferroelectric Bi325La075Ti3O,2 (BLT) thin films have been grown by a sol-gel method. Annealing conditions after the drying process have been explored over a wide range of temperature. BLT thin films prepared on PtJTiO2 coated Si02/Si(100) were investigated by Raman scattering spectroscopy, atomic force microscopy (AFM), and X-ray photoelectron spectroscopy. Raman spectra reveal the growth route of phase-formation of the BLT films. Ferroelectric domains in the thin films are observed by using AFM, registering the electrostatic force response of the thin films in the presence of a low ac field. It is found that the as-grown domain configuration and switching behavior are trongly dependent on growth temperature. Depth-profiling of the electronic states of Bi, Ti, and La atoms shows the oxidation during the growth. Copyright © 2009 American Scientific Publishers All rights reserved.