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Unified analytical model for switching behavior of magnetic tunnel junction

Title
Unified analytical model for switching behavior of magnetic tunnel junction
Authors
Lim H.Lee S.Shin H.
Ewha Authors
신형순이승준
SCOPUS Author ID
신형순scopus; 이승준scopusscopus
Issue Date
2014
Journal Title
IEEE Electron Device Letters
ISSN
0741-3106JCR Link
Citation
IEEE Electron Device Letters vol. 35, no. 2, pp. 193 - 195
Indexed
SCI; SCIE; SCOPUS WOS scopus
Document Type
Article
Abstract
Magnetic tunnel junction (MTJ); magnetoresistive random access memory (MRAM); spin-transfer torque (STT); switching time
DOI
10.1109/LED.2013.2293598
Appears in Collections:
엘텍공과대학 > 전자공학과 > Journal papers
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