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DSpace at EWHA공과대학 전자전기공학전공 Journal papers

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Unified analytical model for switching behavior of magnetic tunnel junction

Title: Unified analytical model for switching behavior of magnetic tunnel junction

Authors: Lim H.; Lee S.; Shin H.

Ewha Authors: 신형순; 이승준

SCOPUS Author ID: 신형순; 이승준

Issue Date: 2014

Journal Title: IEEE Electron Device Letters

ISSN: 0741-3106

Citation: IEEE Electron Device Letters vol. 35, no. 2, pp. 193 - 195

Indexed: SCI; SCIE; SCOPUS

Document Type: Article

Abstract: Magnetic tunnel junction (MTJ); magnetoresistive random access memory (MRAM); spin-transfer torque (STT); switching time

DOI: 10.1109/LED.2013.2293598

Appears in Collections:: 공과대학 > 전자전기공학전공 > Journal papers

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