DSpace at EWHA: Unified analytical model for switching behavior of magnetic tunnel junction

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DC Field	Value	Language
dc.contributor.author	신형순	-
dc.contributor.author	이승준	-
dc.date.accessioned	2016-08-28T11:08:41Z	-
dc.date.available	2016-08-28T11:08:41Z	-
dc.date.issued	2014	-
dc.identifier.issn	0741-3106	-
dc.identifier.other	OAK-11056	-
dc.identifier.uri	https://dspace.ewha.ac.kr/handle/2015.oak/227537	-
dc.description.abstract	Magnetic tunnel junction (MTJ); magnetoresistive random access memory (MRAM); spin-transfer torque (STT); switching time	-
dc.language	English	-
dc.title	Unified analytical model for switching behavior of magnetic tunnel junction	-
dc.type	Article	-
dc.relation.issue	2	-
dc.relation.volume	35	-
dc.relation.index	SCI	-
dc.relation.index	SCIE	-
dc.relation.index	SCOPUS	-
dc.relation.startpage	193	-
dc.relation.lastpage	195	-
dc.relation.journaltitle	IEEE Electron Device Letters	-
dc.identifier.doi	10.1109/LED.2013.2293598	-
dc.identifier.wosid	WOS:000331377500015	-
dc.identifier.scopusid	2-s2.0-84893827437	-
dc.author.google	Lim H.	-
dc.author.google	Lee S.	-
dc.author.google	Shin H.	-
dc.contributor.scopusid	신형순(7404012125)	-
dc.contributor.scopusid	이승준(36064894500;57207064952)	-
dc.date.modifydate	20211210154130	-