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dc.contributor.author신형순-
dc.contributor.author이승준-
dc.date.accessioned2016-08-28T11:08:41Z-
dc.date.available2016-08-28T11:08:41Z-
dc.date.issued2014-
dc.identifier.issn0741-3106-
dc.identifier.otherOAK-11056-
dc.identifier.urihttps://dspace.ewha.ac.kr/handle/2015.oak/227537-
dc.description.abstractMagnetic tunnel junction (MTJ); magnetoresistive random access memory (MRAM); spin-transfer torque (STT); switching time-
dc.languageEnglish-
dc.titleUnified analytical model for switching behavior of magnetic tunnel junction-
dc.typeArticle-
dc.relation.issue2-
dc.relation.volume35-
dc.relation.indexSCI-
dc.relation.indexSCIE-
dc.relation.indexSCOPUS-
dc.relation.startpage193-
dc.relation.lastpage195-
dc.relation.journaltitleIEEE Electron Device Letters-
dc.identifier.doi10.1109/LED.2013.2293598-
dc.identifier.wosidWOS:000331377500015-
dc.identifier.scopusid2-s2.0-84893827437-
dc.author.googleLim H.-
dc.author.googleLee S.-
dc.author.googleShin H.-
dc.contributor.scopusid신형순(7404012125)-
dc.contributor.scopusid이승준(36064894500;57207064952)-
dc.date.modifydate20211210154130-
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엘텍공과대학 > 전자공학과 > Journal papers
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