View : 1056 Download: 0
Charge-based analytical current model for asymmetric Double-Gate MOSFETs
- Title
- Charge-based analytical current model for asymmetric Double-Gate MOSFETs
- Authors
- Park, JS; Lee, S; Jhee, Y; Shin, H
- Ewha Authors
- 지윤규; 신형순; 이승준
- SCOPUS Author ID
- 지윤규
; 신형순
; 이승준

- Issue Date
- 2005
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- ISSN
- 0374-4884
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY vol. 47, pp. S392 - S396
- Keywords
- current model; asymmetric; Double-gate MOSFETs; inversion layer; semiconductor device modeling
- Publisher
- KOREAN PHYSICAL SOC
- Indexed
- SCI; SCIE; SCOPUS; KCI

- Document Type
- Article
Proceedings Paper
- Abstract
- A charge-based analytical current model for an asymmetric Double-Gate (DG) MOSFET is presented. This analytical model is based on the inversion charge instead of the surface potential, so that the volume-inversion characteristics of the thin-body DG MOSFET can be accurately considered. By comparing the model with the device simulation results, model accuracy is verified for the entire operating range, including the linear, saturation, and subthreshold regions.
- Appears in Collections:
- 공과대학 > 전자전기공학전공 > Journal papers
- Files in This Item:
There are no files associated with this item.
- Export
- RIS (EndNote)
- XLS (Excel)
- XML