DSpace at EWHA: Charge-based analytical current model for asymmetric Double-Gate MOSFETs

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DC Field	Value	Language
dc.contributor.author	지윤규	*
dc.contributor.author	신형순	*
dc.contributor.author	이승준	*
dc.date.accessioned	2016-08-27T02:08:22Z	-
dc.date.available	2016-08-27T02:08:22Z	-
dc.date.issued	2005	*
dc.identifier.issn	0374-4884	*
dc.identifier.other	OAK-3052	*
dc.identifier.uri	https://dspace.ewha.ac.kr/handle/2015.oak/215930	-
dc.description.abstract	A charge-based analytical current model for an asymmetric Double-Gate (DG) MOSFET is presented. This analytical model is based on the inversion charge instead of the surface potential, so that the volume-inversion characteristics of the thin-body DG MOSFET can be accurately considered. By comparing the model with the device simulation results, model accuracy is verified for the entire operating range, including the linear, saturation, and subthreshold regions.	*
dc.language	English	*
dc.publisher	KOREAN PHYSICAL SOC	*
dc.subject	current model	*
dc.subject	asymmetric	*
dc.subject	Double-gate MOSFETs	*
dc.subject	inversion layer	*
dc.subject	semiconductor device modeling	*
dc.title	Charge-based analytical current model for asymmetric Double-Gate MOSFETs	*
dc.type	Article	*
dc.type	Proceedings Paper	*
dc.relation.volume	47	*
dc.relation.index	SCI	*
dc.relation.index	SCIE	*
dc.relation.index	SCOPUS	*
dc.relation.index	KCI	*
dc.relation.startpage	S392	*
dc.relation.lastpage	S396	*
dc.relation.journaltitle	JOURNAL OF THE KOREAN PHYSICAL SOCIETY	*
dc.identifier.wosid	WOS:000233805900006	*
dc.identifier.scopusid	2-s2.0-29344459263	*
dc.author.google	Park, JS	*
dc.author.google	Lee, S	*
dc.author.google	Jhee, Y	*
dc.author.google	Shin, H	*
dc.contributor.scopusid	지윤규(6603582827)	*
dc.contributor.scopusid	신형순(7404012125)	*
dc.contributor.scopusid	이승준(36064894500;57207064952)	*
dc.date.modifydate	20240322125227	*