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Tailored Band Alignment for Improved Carrier Transport in Composition-Controlled Sb2(S,Se)3
- Title
- Tailored Band Alignment for Improved Carrier Transport in Composition-Controlled Sb2(S,Se)3
- Authors
- Lim; Geumha; Park; Ha Kyung; Wang; Yazi; Ji; Seung Hwan; Shin; Byungha; Jo; William
- Ewha Authors
- 조윌렴
- SCOPUS Author ID
- 조윌렴
![scopus](/images/layout/icon2.png)
- Issue Date
- 2024
- Journal Title
- Journal of Physical Chemistry Letters
- ISSN
- 1948-7185
- Citation
- Journal of Physical Chemistry Letters vol. 15, no. 10, pp. 2825 - 2833
- Publisher
- American Chemical Society
- Indexed
- SCIE; SCOPUS
![scopus](/images/layout/scopus2.gif)
- Document Type
- Article
- Abstract
- Sb2(S,Se)3 is a highly available energy material with a tunable bandgap by adjusting the S/Se ratio. Increasing the Se ratio can enhance the efficiency of Sb2(S,Se)3 solar cells, with a higher short-circuit current (JSC). However, the accompanying decrease in the open-circuit voltage (VOC) restricts further improvement. The defect passivation is important, since it can reduce carrier recombination, enhancing the VOC. In this study, the relevance of the S/Se ratio, defect concentration, and VOC was investigated. The samples with or without the deposition of Se-rich Sb2(S,Se)3 onto S-rich Sb2(S,Se)3 were used for defect characterization. Different surface compositions were confirmed by Raman spectroscopy. The complicated subdefect states of S-rich Sb2(S,Se)3 were shown through photoluminescence and conductive atomic force microscopy, and a decrease in the defect concentration was observed through surface photovoltage. The improvement of JSC via bandgap grading and the simultaneous VOC improvement by defect passivation resulted in efficient cell performance. © 2024 American Chemical Society.
- DOI
- 10.1021/acs.jpclett.4c00257
- Appears in Collections:
- 자연과학대학 > 물리학전공 > Journal papers
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