Full metadata record
DC Field | Value | Language |
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dc.contributor.author | 조윌렴 | - |
dc.date.accessioned | 2024-05-17T16:31:29Z | - |
dc.date.available | 2024-05-17T16:31:29Z | - |
dc.date.issued | 2024 | - |
dc.identifier.issn | 1948-7185 | - |
dc.identifier.other | OAK-34973 | - |
dc.identifier.uri | https://dspace.ewha.ac.kr/handle/2015.oak/268367 | - |
dc.description.abstract | Sb2(S,Se)3 is a highly available energy material with a tunable bandgap by adjusting the S/Se ratio. Increasing the Se ratio can enhance the efficiency of Sb2(S,Se)3 solar cells, with a higher short-circuit current (JSC). However, the accompanying decrease in the open-circuit voltage (VOC) restricts further improvement. The defect passivation is important, since it can reduce carrier recombination, enhancing the VOC. In this study, the relevance of the S/Se ratio, defect concentration, and VOC was investigated. The samples with or without the deposition of Se-rich Sb2(S,Se)3 onto S-rich Sb2(S,Se)3 were used for defect characterization. Different surface compositions were confirmed by Raman spectroscopy. The complicated subdefect states of S-rich Sb2(S,Se)3 were shown through photoluminescence and conductive atomic force microscopy, and a decrease in the defect concentration was observed through surface photovoltage. The improvement of JSC via bandgap grading and the simultaneous VOC improvement by defect passivation resulted in efficient cell performance. © 2024 American Chemical Society. | - |
dc.language | English | - |
dc.publisher | American Chemical Society | - |
dc.title | Tailored Band Alignment for Improved Carrier Transport in Composition-Controlled Sb2(S,Se)3 | - |
dc.type | Article | - |
dc.relation.issue | 10 | - |
dc.relation.volume | 15 | - |
dc.relation.index | SCIE | - |
dc.relation.index | SCOPUS | - |
dc.relation.startpage | 2825 | - |
dc.relation.lastpage | 2833 | - |
dc.relation.journaltitle | Journal of Physical Chemistry Letters | - |
dc.identifier.doi | 10.1021/acs.jpclett.4c00257 | - |
dc.identifier.wosid | WOS:001180340900001 | - |
dc.identifier.scopusid | 2-s2.0-85187172735 | - |
dc.author.google | Lim | - |
dc.author.google | Geumha | - |
dc.author.google | Park | - |
dc.author.google | Ha Kyung | - |
dc.author.google | Wang | - |
dc.author.google | Yazi | - |
dc.author.google | Ji | - |
dc.author.google | Seung Hwan | - |
dc.author.google | Shin | - |
dc.author.google | Byungha | - |
dc.author.google | Jo | - |
dc.author.google | William | - |
dc.contributor.scopusid | 조윌렴(7103322276) | - |
dc.date.modifydate | 20240517142941 | - |