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Improving the Stability of Non-fullerene-Based Organic Photovoltaics through Sequential Deposition and Utilization of a Quasi-orthogonal Solvent

Title
Improving the Stability of Non-fullerene-Based Organic Photovoltaics through Sequential Deposition and Utilization of a Quasi-orthogonal Solvent
Authors
Hong M.Youn J.Ryu K.Y.Shafian S.Kim K.
Ewha Authors
김경곤
SCOPUS Author ID
김경곤scopus
Issue Date
2023
Journal Title
ACS Applied Materials and Interfaces
ISSN
1944-8244JCR Link
Citation
ACS Applied Materials and Interfaces vol. 15, no. 16, pp. 20151 - 20158
Keywords
burn-in free organic photovoltaic devicenon-fullerene acceptororganic photovoltaic device stabilityphotoactive layer/electrode interfacesequential deposition process
Publisher
American Chemical Society
Indexed
SCIE; SCOPUS WOS scopus
Document Type
Article
Abstract
The development of organic photovoltaic (OPV) devices based on non-fullerene acceptors (NFAs) has led to a rapid improvement in their efficiency. Despite these improvements, significant performance degradation in the early stages of operation, known as burn-in, remains a challenge for NFA-based OPVs. To address this challenge, this study demonstrates a stable NFA-based OPV fabricated using sequential deposition (SqD) and a quasi-orthogonal solvent. The quasi-orthogonal solvent, which is prepared by incorporating 1-chloronaphthalene (1-CN) into dichloromethane (DCM), reduces the vapor pressure of the solvent and allows for the efficient dissolution and penetration of the Y6 (one of efficient NFAs) into a PM6 polymer-donor layer without damaging the latter. The resulting bulk heterojunction (BHJ) is characterized by a higher degree of crystallinity in the PM6 domains than that prepared using a conventional single-step deposition (SD) process. The OPV fabricated using the SqD process exhibits a PCE of 14.1% and demonstrates superior thermal stability to the SD-processed OPV. This study conclusively reveals that the formation of a thermally stable interface between the photoactive layer and the electron-transport layer (ETL) is the primary factor contributing to the high thermal stability observed in the SqD-processed OPV. © 2023 American Chemical Society.
DOI
10.1021/acsami.3c02071
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자연과학대학 > 화학·나노과학전공 > Journal papers
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