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dc.contributor.author김경곤*
dc.date.accessioned2023-07-31T16:31:23Z-
dc.date.available2023-07-31T16:31:23Z-
dc.date.issued2023*
dc.identifier.issn1944-8244*
dc.identifier.otherOAK-33444*
dc.identifier.urihttps://dspace.ewha.ac.kr/handle/2015.oak/265395-
dc.description.abstractThe development of organic photovoltaic (OPV) devices based on non-fullerene acceptors (NFAs) has led to a rapid improvement in their efficiency. Despite these improvements, significant performance degradation in the early stages of operation, known as burn-in, remains a challenge for NFA-based OPVs. To address this challenge, this study demonstrates a stable NFA-based OPV fabricated using sequential deposition (SqD) and a quasi-orthogonal solvent. The quasi-orthogonal solvent, which is prepared by incorporating 1-chloronaphthalene (1-CN) into dichloromethane (DCM), reduces the vapor pressure of the solvent and allows for the efficient dissolution and penetration of the Y6 (one of efficient NFAs) into a PM6 polymer-donor layer without damaging the latter. The resulting bulk heterojunction (BHJ) is characterized by a higher degree of crystallinity in the PM6 domains than that prepared using a conventional single-step deposition (SD) process. The OPV fabricated using the SqD process exhibits a PCE of 14.1% and demonstrates superior thermal stability to the SD-processed OPV. This study conclusively reveals that the formation of a thermally stable interface between the photoactive layer and the electron-transport layer (ETL) is the primary factor contributing to the high thermal stability observed in the SqD-processed OPV. © 2023 American Chemical Society.*
dc.languageEnglish*
dc.publisherAmerican Chemical Society*
dc.subjectburn-in free organic photovoltaic device*
dc.subjectnon-fullerene acceptor*
dc.subjectorganic photovoltaic device stability*
dc.subjectphotoactive layer/electrode interface*
dc.subjectsequential deposition process*
dc.titleImproving the Stability of Non-fullerene-Based Organic Photovoltaics through Sequential Deposition and Utilization of a Quasi-orthogonal Solvent*
dc.typeArticle*
dc.relation.issue16*
dc.relation.volume15*
dc.relation.indexSCIE*
dc.relation.indexSCOPUS*
dc.relation.startpage20151*
dc.relation.lastpage20158*
dc.relation.journaltitleACS Applied Materials and Interfaces*
dc.identifier.doi10.1021/acsami.3c02071*
dc.identifier.wosidWOS:000980514300001*
dc.identifier.scopusid2-s2.0-85154067675*
dc.author.googleHong M.*
dc.author.googleYoun J.*
dc.author.googleRyu K.Y.*
dc.author.googleShafian S.*
dc.author.googleKim K.*
dc.contributor.scopusid김경곤(7409321823)*
dc.date.modifydate20240220113038*
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자연과학대학 > 화학·나노과학전공 > Journal papers
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