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Retarded Charge-Carrier Recombination in Photoelectrochemical Cells from Plasmon-Induced Resonance Energy Transfer
- Title
- Retarded Charge-Carrier Recombination in Photoelectrochemical Cells from Plasmon-Induced Resonance Energy Transfer
- Authors
- Choi, Young Moon; Lee, Byoung Wan; Jung, Myung Sun; Han, Hyun Soo; Kim, Suk Hyun; Chen, Kaifeng; Kim, Dong Ha; Heinz, Tony F.; Fan, Shanhui; Lee, Jihye; Yi, Gi-Ra; Kim, Jung Kyu; Park, Jong Hyeok
- Ewha Authors
- 김동하
- SCOPUS Author ID
- 김동하
- Issue Date
- 2020
- Journal Title
- ADVANCED ENERGY MATERIALS
- ISSN
- 1614-6832
1614-6840
- Citation
- ADVANCED ENERGY MATERIALS vol. 10, no. 22
- Keywords
- 2D pattern array; gold nanospheres; metal oxide photoanodes; solar water splitting
- Publisher
- WILEY-V C H VERLAG GMBH
- Indexed
- SCIE; SCOPUS
- Document Type
- Article
- Abstract
- N-type metal oxides such as hematite (alpha-Fe2O3) and bismuth vanadate (BiVO4) are promising candidate materials for efficient photoelectrochemical water splitting; however, their short minority carrier diffusion length and restricted carrier lifetime result in undesired rapid charge recombination. Herein, a 2D arranged globular Au nanosphere (NS) monolayer array with a highly ordered hexagonal hole pattern (hereafter, Au array) is introduced onto the surface of photoanodes comprised of metal oxide films via a facile drying and transfer-printing process. Through plasmon-induced resonance energy transfer, the Au array provides a strong electromagnetic field in the near-surface area of the metal oxide film. The near-field coupling interaction and amplification of the electromagnetic field suppress the charge recombination with long-lived photogenerated holes and simultaneously enhance the light harvesting and charge transfer efficiencies. Consequently, an over 3.3-fold higher photocurrent density at 1.23 V versus reversible hydrogen electrode (RHE) is achieved for the Au array/alpha-Fe2O3. Furthermore, the high versatility of this transfer printing of Au arrays is demonstrated by introducing it on the molybdenum-doped BiVO4 film, resulting in 1.5-fold higher photocurrent density at 1.23 V versus RHE. The tailored metal film design can provide a potential strategy for the versatile application in various light-mediated energy conversion and optoelectronic devices.
- DOI
- 10.1002/aenm.202000570
- Appears in Collections:
- 자연과학대학 > 화학·나노과학전공 > Journal papers
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