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Analysis of the Sensing Margin of Silicon and Poly-Si 1T-DRAM
- Title
- Analysis of the Sensing Margin of Silicon and Poly-Si 1T-DRAM
- Authors
- Kim, Hyeonjeong; Yoo, Songyi; Kang, In-Man; Cho, Seongjae; Sun, Wookyung; Shin, Hyungsoon
- Ewha Authors
- 신형순; 선우경
- SCOPUS Author ID
- 신형순; 선우경
- Issue Date
- 2020
- Journal Title
- MICROMACHINES
- ISSN
- 2072-666X
- Citation
- MICROMACHINES vol. 11, no. 2
- Keywords
- one-transistor dynamic random-access memory (1T-DRAM); polysilicon; grain boundary; electron trapping
- Publisher
- MDPI
- Indexed
- SCIE; SCOPUS
- Document Type
- Article
- Abstract
- Recently, one-transistor dynamic random-access memory (1T-DRAM) cells having a polysilicon body (poly-Si 1T-DRAM) have attracted attention as candidates to replace conventional one-transistor one-capacitor dynamic random-access memory (1T-1C DRAM). Poly-Si 1T-DRAM enables the cost-effective implementation of a silicon-on-insulator (SOI) structure and a three-dimensional (3D) stacked architecture for increasing integration density. However, studies on the transient characteristics of poly-Si 1T-DRAM are still lacking. In this paper, with TCAD simulation, we examine the differences between the memory mechanisms in poly-Si and silicon body 1T-DRAM. A silicon 1T-DRAM cell's data state is determined by the number of holes stored in a floating body (FB), while a poly-Si 1T-DRAM cell's state depends on the number of electrons trapped in its grain boundary (GB). This means that a poly-Si 1T-DRAM can perform memory operations by using GB as a storage region in thin body devices with a small FB area.
- DOI
- 10.3390/mi11020228
- Appears in Collections:
- 공과대학 > 전자전기공학전공 > Journal papers
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