Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 신형순 | * |
dc.contributor.author | 선우경 | * |
dc.date.accessioned | 2020-04-06T16:30:04Z | - |
dc.date.available | 2020-04-06T16:30:04Z | - |
dc.date.issued | 2020 | * |
dc.identifier.issn | 2072-666X | * |
dc.identifier.other | OAK-26687 | * |
dc.identifier.uri | https://dspace.ewha.ac.kr/handle/2015.oak/253713 | - |
dc.description.abstract | Recently, one-transistor dynamic random-access memory (1T-DRAM) cells having a polysilicon body (poly-Si 1T-DRAM) have attracted attention as candidates to replace conventional one-transistor one-capacitor dynamic random-access memory (1T-1C DRAM). Poly-Si 1T-DRAM enables the cost-effective implementation of a silicon-on-insulator (SOI) structure and a three-dimensional (3D) stacked architecture for increasing integration density. However, studies on the transient characteristics of poly-Si 1T-DRAM are still lacking. In this paper, with TCAD simulation, we examine the differences between the memory mechanisms in poly-Si and silicon body 1T-DRAM. A silicon 1T-DRAM cell's data state is determined by the number of holes stored in a floating body (FB), while a poly-Si 1T-DRAM cell's state depends on the number of electrons trapped in its grain boundary (GB). This means that a poly-Si 1T-DRAM can perform memory operations by using GB as a storage region in thin body devices with a small FB area. | * |
dc.language | English | * |
dc.publisher | MDPI | * |
dc.subject | one-transistor dynamic random-access memory (1T-DRAM) | * |
dc.subject | polysilicon | * |
dc.subject | grain boundary | * |
dc.subject | electron trapping | * |
dc.title | Analysis of the Sensing Margin of Silicon and Poly-Si 1T-DRAM | * |
dc.type | Article | * |
dc.relation.issue | 2 | * |
dc.relation.volume | 11 | * |
dc.relation.index | SCIE | * |
dc.relation.index | SCOPUS | * |
dc.relation.journaltitle | MICROMACHINES | * |
dc.identifier.doi | 10.3390/mi11020228 | * |
dc.identifier.wosid | WOS:000520181500117 | * |
dc.author.google | Kim, Hyeonjeong | * |
dc.author.google | Yoo, Songyi | * |
dc.author.google | Kang, In-Man | * |
dc.author.google | Cho, Seongjae | * |
dc.author.google | Sun, Wookyung | * |
dc.author.google | Shin, Hyungsoon | * |
dc.contributor.scopusid | 신형순(7404012125) | * |
dc.contributor.scopusid | 선우경(7404011223) | * |
dc.date.modifydate | 20240322125227 | * |