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GaN microstructure light-emitting diodes directly fabricated on tungsten-metal electrodes using a micro-patterned graphene interlayer
- GaN microstructure light-emitting diodes directly fabricated on tungsten-metal electrodes using a micro-patterned graphene interlayer
- Chung, Kunook; Lee, Keundong; Tchoe, Youngbin; Oh, Hongseok; Park, JunBeom; Hyun, Jerome K.; Yi, Gyu-Chul
- Ewha Authors
- SCOPUS Author ID
- Issue Date
- Journal Title
- NANO ENERGY
- NANO ENERGY vol. 60, pp. 82 - 86
- Metal electrode substrate; Graphene; Gallium nitride microstructure; Epitaxial lateral overgrowth; Light-emitting diode arrays
- ELSEVIER SCIENCE BV
- SCIE; SCOPUS
- Document Type
- We report on the selective-area growth of GaN microstructures on tungsten (W)-metal electrodes using a micro-patterned graphene intermediate layer between GaN and W, and demonstrate their use as light-emitting diodes (LEDs). Prior to the GaN growths, the cm-scale graphene layer was transferred on W and then further patterned into a regular array of few-mu m-sized graphene microdots using conventional lithography. The graphene microdots served as a seed layer for selectively growing crack-free GaN microstructures with regular diameter and spacing. Each microstructure displayed a microdisk morphology, exhibiting a single crystalline phase from epitaxial lateral overgrowth (ELOG). We observed ohmic behavior between the as-grown GaN microdisks and underlying W film, facilitating the fabrication of LED microarrays. Using the underlying W layer as an ohmic contact, we fabricated p-n junction GaN microdisk LEDs, consisting of three periods of InxGa1-xN/GaN multiple quantum wells. Uniform electroluminescence was observed across the microdisks. These results open up novel strategies for streamlined fabrication of high-performance and high-resolution LEDs.
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