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GaN microstructure light-emitting diodes directly fabricated on tungsten-metal electrodes using a micro-patterned graphene interlayer

Title
GaN microstructure light-emitting diodes directly fabricated on tungsten-metal electrodes using a micro-patterned graphene interlayer
Authors
Chung K.Lee K.Tchoe Y.Oh H.Park J.Hyun J.K.Yi G.-C.
Ewha Authors
현가담
SCOPUS Author ID
현가담scopus
Issue Date
2019
Journal Title
Nano Energy
ISSN
2211-2855JCR Link
Citation
Nano Energy vol. 60, pp. 82 - 86
Keywords
Epitaxial lateral overgrowthGallium nitride microstructureGrapheneLight-emitting diode arraysMetal electrode substrate
Publisher
Elsevier Ltd
Indexed
SCIE; SCOPUS scopus
Document Type
Article
Abstract
We report on the selective-area growth of GaN microstructures on tungsten (W)-metal electrodes using a micro-patterned graphene intermediate layer between GaN and W, and demonstrate their use as light-emitting diodes (LEDs). Prior to the GaN growths, the cm-scale graphene layer was transferred on W and then further patterned into a regular array of few-μm-sized graphene microdots using conventional lithography. The graphene microdots served as a seed layer for selectively growing crack-free GaN microstructures with regular diameter and spacing. Each microstructure displayed a microdisk morphology, exhibiting a single crystalline phase from epitaxial lateral overgrowth (ELOG). We observed ohmic behavior between the as-grown GaN microdisks and underlying W film, facilitating the fabrication of LED microarrays. Using the underlying W layer as an ohmic contact, we fabricated p-n junction GaN microdisk LEDs, consisting of three periods of In x Ga 1–x N/GaN multiple quantum wells. Uniform electroluminescence was observed across the microdisks. These results open up novel strategies for streamlined fabrication of high-performance and high-resolution LEDs. © 2019 Elsevier Ltd
DOI
10.1016/j.nanoen.2019.03.040
Appears in Collections:
자연과학대학 > 화학·나노과학전공 > Journal papers
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