Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 현가담 | * |
dc.date.accessioned | 2019-05-03T16:30:10Z | - |
dc.date.available | 2019-05-03T16:30:10Z | - |
dc.date.issued | 2019 | * |
dc.identifier.issn | 2211-2855 | * |
dc.identifier.issn | 2211-3282 | * |
dc.identifier.other | OAK-24675 | * |
dc.identifier.uri | https://dspace.ewha.ac.kr/handle/2015.oak/249740 | - |
dc.description.abstract | We report on the selective-area growth of GaN microstructures on tungsten (W)-metal electrodes using a micro-patterned graphene intermediate layer between GaN and W, and demonstrate their use as light-emitting diodes (LEDs). Prior to the GaN growths, the cm-scale graphene layer was transferred on W and then further patterned into a regular array of few-mu m-sized graphene microdots using conventional lithography. The graphene microdots served as a seed layer for selectively growing crack-free GaN microstructures with regular diameter and spacing. Each microstructure displayed a microdisk morphology, exhibiting a single crystalline phase from epitaxial lateral overgrowth (ELOG). We observed ohmic behavior between the as-grown GaN microdisks and underlying W film, facilitating the fabrication of LED microarrays. Using the underlying W layer as an ohmic contact, we fabricated p-n junction GaN microdisk LEDs, consisting of three periods of InxGa1-xN/GaN multiple quantum wells. Uniform electroluminescence was observed across the microdisks. These results open up novel strategies for streamlined fabrication of high-performance and high-resolution LEDs. | * |
dc.language | English | * |
dc.publisher | ELSEVIER SCIENCE BV | * |
dc.subject | Metal electrode substrate | * |
dc.subject | Graphene | * |
dc.subject | Gallium nitride microstructure | * |
dc.subject | Epitaxial lateral overgrowth | * |
dc.subject | Light-emitting diode arrays | * |
dc.title | GaN microstructure light-emitting diodes directly fabricated on tungsten-metal electrodes using a micro-patterned graphene interlayer | * |
dc.type | Article | * |
dc.relation.volume | 60 | * |
dc.relation.index | SCIE | * |
dc.relation.index | SCOPUS | * |
dc.relation.startpage | 82 | * |
dc.relation.lastpage | 86 | * |
dc.relation.journaltitle | NANO ENERGY | * |
dc.identifier.doi | 10.1016/j.nanoen.2019.03.040 | * |
dc.identifier.wosid | WOS:000467774100010 | * |
dc.identifier.scopusid | 2-s2.0-85063012812 | * |
dc.author.google | Chung, Kunook | * |
dc.author.google | Lee, Keundong | * |
dc.author.google | Tchoe, Youngbin | * |
dc.author.google | Oh, Hongseok | * |
dc.author.google | Park, JunBeom | * |
dc.author.google | Hyun, Jerome K. | * |
dc.author.google | Yi, Gyu-Chul | * |
dc.contributor.scopusid | 현가담(15059072600) | * |
dc.date.modifydate | 20240429132401 | * |