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Efficient frequency-domain simulation technique for short-channel MOSFET

Title
Efficient frequency-domain simulation technique for short-channel MOSFET
Authors
Lee K.-I.Lee C.Shin H.Park Y.J.Min H.S.
Ewha Authors
신형순
SCOPUS Author ID
신형순scopus
Issue Date
2005
Journal Title
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
ISSN
0278-0070JCR Link
Citation
vol. 24, no. 6, pp. 862 - 867
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
This paper proposes and investigates a short-channel MOSFET model down to a 0.1-μm regime for the frequency-domain analysis of the device operation through the harmonic balance technique. The efficiency and the preciseness of our method are validated by comparison of simulation results with the two-dimensional time-domain simulation tool, MEDICI. Along with the carrier transport model, the displacement current components are included in the terminal current equations for the extended analysis under external circuit environments. © 2005 IEEE.
DOI
10.1109/TCAD.2005.847896
Appears in Collections:
엘텍공과대학 > 전자공학과 > Journal papers
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