Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 신형순 | * |
dc.date.accessioned | 2018-05-18T08:15:04Z | - |
dc.date.available | 2018-05-18T08:15:04Z | - |
dc.date.issued | 2005 | * |
dc.identifier.issn | 0278-0070 | * |
dc.identifier.other | OAK-2751 | * |
dc.identifier.uri | https://dspace.ewha.ac.kr/handle/2015.oak/243128 | - |
dc.description.abstract | This paper proposes and investigates a short-channel MOSFET model down to a 0.1-μm regime for the frequency-domain analysis of the device operation through the harmonic balance technique. The efficiency and the preciseness of our method are validated by comparison of simulation results with the two-dimensional time-domain simulation tool, MEDICI. Along with the carrier transport model, the displacement current components are included in the terminal current equations for the extended analysis under external circuit environments. © 2005 IEEE. | * |
dc.language | English | * |
dc.title | Efficient frequency-domain simulation technique for short-channel MOSFET | * |
dc.type | Article | * |
dc.relation.issue | 6 | * |
dc.relation.volume | 24 | * |
dc.relation.index | SCI | * |
dc.relation.index | SCIE | * |
dc.relation.index | SCOPUS | * |
dc.relation.startpage | 862 | * |
dc.relation.lastpage | 867 | * |
dc.relation.journaltitle | IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems | * |
dc.identifier.doi | 10.1109/TCAD.2005.847896 | * |
dc.identifier.wosid | WOS:000229488800006 | * |
dc.identifier.scopusid | 2-s2.0-20444489507 | * |
dc.author.google | Lee K.-I. | * |
dc.author.google | Lee C. | * |
dc.author.google | Shin H. | * |
dc.author.google | Park Y.J. | * |
dc.author.google | Min H.S. | * |
dc.contributor.scopusid | 신형순(7404012125) | * |
dc.date.modifydate | 20240322125227 | * |