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자연과학대학
물리학전공
Journal papers
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Bi-induced vibrational modes in GaAsBi
Title
Bi-induced vibrational modes in GaAsBi
Authors
Seong M.J.
;
Francoeur S.
;
Yoon S.
;
Mascarenhas A.
;
Tixier S.
;
Adamcyk M.
;
Tiedje T.
Ewha Authors
윤석현
SCOPUS Author ID
윤석현
Issue Date
2005
Journal Title
Superlattices and Microstructures
ISSN
0749-6036
Citation
Superlattices and Microstructures vol. 37, no. 6, pp. 394 - 400
Indexed
SCI; SCIE; SCOPUS
Document Type
Article
Abstract
We have studied GaAs1-xBix (up to x∼3%) using Raman scattering with two different polarization configurations. Two Bi-induced phonon modes are observed at ∼186 cm-1 and ∼214 cm -1 with increasing Raman intensity as the Bi concentration increases. By comparing Raman selection rules for the observed Bi-induced phonon modes with those for the substitutional N vibrational mode (GaN mode) in GaAsN, the phonon mode at ∼214 cm-1 is identified as originating from substitutional Bi at the As site in GaAsBi. © 2005 Elsevier Ltd. All rights reserved.
DOI
10.1016/j.spmi.2005.02.004
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