DSpace at EWHA: Bi-induced vibrational modes in GaAsBi

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DC Field	Value	Language
dc.contributor.author	윤석현	*
dc.date.accessioned	2018-05-18T08:15:04Z	-
dc.date.available	2018-05-18T08:15:04Z	-
dc.date.issued	2005	*
dc.identifier.issn	0749-6036	*
dc.identifier.other	OAK-2755	*
dc.identifier.uri	https://dspace.ewha.ac.kr/handle/2015.oak/243125	-
dc.description.abstract	We have studied GaAs1-xBix (up to x∼3%) using Raman scattering with two different polarization configurations. Two Bi-induced phonon modes are observed at ∼186 cm-1 and ∼214 cm -1 with increasing Raman intensity as the Bi concentration increases. By comparing Raman selection rules for the observed Bi-induced phonon modes with those for the substitutional N vibrational mode (GaN mode) in GaAsN, the phonon mode at ∼214 cm-1 is identified as originating from substitutional Bi at the As site in GaAsBi. © 2005 Elsevier Ltd. All rights reserved.	*
dc.language	English	*
dc.title	Bi-induced vibrational modes in GaAsBi	*
dc.type	Article	*
dc.relation.issue	6	*
dc.relation.volume	37	*
dc.relation.index	SCI	*
dc.relation.index	SCIE	*
dc.relation.index	SCOPUS	*
dc.relation.startpage	394	*
dc.relation.lastpage	400	*
dc.relation.journaltitle	Superlattices and Microstructures	*
dc.identifier.doi	10.1016/j.spmi.2005.02.004	*
dc.identifier.wosid	WOS:000229512400005	*
dc.identifier.scopusid	2-s2.0-18544384666	*
dc.author.google	Seong M.J.	*
dc.author.google	Francoeur S.	*
dc.author.google	Yoon S.	*
dc.author.google	Mascarenhas A.	*
dc.author.google	Tixier S.	*
dc.author.google	Adamcyk M.	*
dc.author.google	Tiedje T.	*
dc.contributor.scopusid	윤석현(55732105900)	*
dc.date.modifydate	20231120162901	*