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자연과학대학
물리학전공
Journal papers
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Pressure-dependent Schottky barrier at the metal-nanotube contact
Title
Pressure-dependent Schottky barrier at the metal-nanotube contact
Authors
Park N.
;
Kang D.
;
Hong S.
;
Han S.
Ewha Authors
한승우
SCOPUS Author ID
한승우
Issue Date
2005
Journal Title
Applied Physics Letters
ISSN
0003-6951
Citation
Applied Physics Letters vol. 87, no. 1
Indexed
SCI; SCIE; SCOPUS
Document Type
Article
Abstract
We carry out first-principles density-functional calculations to investigate the electronic structure of the gold-carbon nanotube contact. It is found that a pressure applied on the gold-nanotube contact shifts the Fermi level from the valence edge to the conduction edge of the carbon nanotube. This can explain the n -type transport behavior frequently observed in the nanotube field-effect transistor using the gold as electrodes. An atomistic model is proposed for a possible origin of the pressure when the nanotube is embedded in the gold electrode. © 2005 American Institute of Physics.
DOI
10.1063/1.1990251
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