Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 한승우 | - |
dc.date.accessioned | 2018-05-18T08:15:00Z | - |
dc.date.available | 2018-05-18T08:15:00Z | - |
dc.date.issued | 2005 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | OAK-2802 | - |
dc.identifier.uri | https://dspace.ewha.ac.kr/handle/2015.oak/243099 | - |
dc.description.abstract | We carry out first-principles density-functional calculations to investigate the electronic structure of the gold-carbon nanotube contact. It is found that a pressure applied on the gold-nanotube contact shifts the Fermi level from the valence edge to the conduction edge of the carbon nanotube. This can explain the n -type transport behavior frequently observed in the nanotube field-effect transistor using the gold as electrodes. An atomistic model is proposed for a possible origin of the pressure when the nanotube is embedded in the gold electrode. © 2005 American Institute of Physics. | - |
dc.language | English | - |
dc.title | Pressure-dependent Schottky barrier at the metal-nanotube contact | - |
dc.type | Article | - |
dc.relation.issue | 1 | - |
dc.relation.volume | 87 | - |
dc.relation.index | SCI | - |
dc.relation.index | SCIE | - |
dc.relation.index | SCOPUS | - |
dc.relation.journaltitle | Applied Physics Letters | - |
dc.identifier.doi | 10.1063/1.1990251 | - |
dc.identifier.wosid | WOS:000230277900050 | - |
dc.identifier.scopusid | 2-s2.0-24144461715 | - |
dc.author.google | Park N. | - |
dc.author.google | Kang D. | - |
dc.author.google | Hong S. | - |
dc.author.google | Han S. | - |
dc.contributor.scopusid | 한승우(55557541900) | - |
dc.date.modifydate | 20211210152321 | - |