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Structure-Property Relationships of Semiconducting Polymers for Flexible and Durable Polymer Field-Effect Transistors
- Structure-Property Relationships of Semiconducting Polymers for Flexible and Durable Polymer Field-Effect Transistors
- Kim, Min Je; Jung, A-Ra; Lee, Myeongjae; Kim, Dongjin; Ro, Suhee; Jin, Seon-Mi; Hieu Dinh Nguyen; Yang, Jeehye; Lee, Kyung-Koo; Lee, Eunji; Kang, Moon Sung; Kim, Hyunjung; Cho, Jong-Ho; Kim, BongSoo; Cho, Jeong Ho
- Ewha Authors
- SCOPUS Author ID
- Issue Date
- Journal Title
- ACS APPLIED MATERIALS & INTERFACES
- vol. 9, no. 46, pp. 40503 - 40515
- flexible field-effect transistors; structure-property relationship; organic semiconductors; carrier mobility; mechanical stability
- AMER CHEMICAL SOC
- SCI; SCIE; SCOPUS
- We report high-performance top-gate bottom-contact flexible polymer field-effect transistors (FETs) fabricated by flow-coating diketopyrrolopyrrole (DPP)-based and naphthalene diimide (NDI)-based polymers (P(DPP2DT-T2), P(DPP2DT-TT), P(DPP2DT-DTT), P(NDI2OD-T2), P(NDI2OD-F2T2), and P(NDI2OD-Se2)) as semiconducting channel materials. All of the polymers displayed good FET characteristics with on/off current ratios exceeding 10(7). The highest hole mobility of 1.51 cm(2) V-1 s(-1) and the highest electron mobility of 0.85 cm(2) V-1 s(-1) were obtained from the P(DPP2DT-T2) and P(NDI2OD-Se2) polymer FETs, respectively. The impacts of the polymer structures on the FET performance are well-explained by the interplay between the crystallinity, the tendency of the polymer backbone to adopt an edge-on orientation, and the interconnectivity of polymer fibrils in the film state. Additionally, we demonstrated that all of the flexible polymer-based FETs were highly resistant to tensile stress, with negligible changes in their carrier mobilities and on/off ratios after a bending test. Conclusively, these high-performance, flexible, and durable FETs demonstrate the potential of semiconducting conjugated polymers for use in flexible electronic applications.
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