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Multi-level non-volatile organic transistor-based memory using lithium-ion-encapsulated fullerene as a charge trapping layer

Title
Multi-level non-volatile organic transistor-based memory using lithium-ion-encapsulated fullerene as a charge trapping layer
Authors
Tran C.M.Sakai H.Kawashima Y.Ohkubo K.Fukuzumi S.Murata H.
Ewha Authors
Shunichi Fukuzumi
SCOPUS Author ID
Shunichi Fukuzumiscopus
Issue Date
2017
Journal Title
Organic Electronics: physics, materials, applications
ISSN
1566-1199JCR Link
Citation
vol. 45, pp. 234 - 239
Keywords
Electron trappingLithium-ion-encapsulated fullereneMulti-level non-volatile organic memory
Publisher
Elsevier B.V.
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
We report on multi-level non-volatile organic transistor-based memory using pentacene semiconductor and a lithium-ion-encapsulated fullerene (Li+@C60) as a charge trapping layer. Memory organic field-effect transistors (OFETs) with a Si++/SiO2/Li+@C60/Cytop/Pentacene/Cu structure exhibited a performance of p-type transistor with a threshold voltage (Vth) of −5.98 V and a mobility (μ) of 0.84 cm2 V−1 s−1. The multi-level memory OFETs exhibited memory windows (ΔVth) of approximate 10 V, 16 V, and 32 V, with a programming gate voltage of 150 V for 0.5 s, 5 s, and 50 s, and an erasing gate voltage of −150 V for 0.17 s, 1.7 s, and 17 s, respectively. Four logic states were clearly distinguishable in our multi-level memory, and its data could be programmed or erased many times. The multi-level memory effect in our OFETs is ascribed to the electron-trapping ability of the Li+@C60 layer. © 2017 Elsevier B.V.
DOI
10.1016/j.orgel.2017.03.018
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자연과학대학 > 화학·나노과학전공 > Journal papers
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