Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Shunichi Fukuzumi | * |
dc.date.accessioned | 2017-04-25T01:04:29Z | - |
dc.date.available | 2017-04-25T01:04:29Z | - |
dc.date.issued | 2017 | * |
dc.identifier.issn | 1566-1199 | * |
dc.identifier.other | OAK-20422 | * |
dc.identifier.uri | https://dspace.ewha.ac.kr/handle/2015.oak/235016 | - |
dc.description.abstract | We report on multi-level non-volatile organic transistor-based memory using pentacene semiconductor and a lithium-ion-encapsulated fullerene (Li+@C60) as a charge trapping layer. Memory organic field-effect transistors (OFETs) with a Si++/SiO2/Li+@C60/Cytop/Pentacene/Cu structure exhibited a performance of p-type transistor with a threshold voltage (Vth) of −5.98 V and a mobility (μ) of 0.84 cm2 V−1 s−1. The multi-level memory OFETs exhibited memory windows (ΔVth) of approximate 10 V, 16 V, and 32 V, with a programming gate voltage of 150 V for 0.5 s, 5 s, and 50 s, and an erasing gate voltage of −150 V for 0.17 s, 1.7 s, and 17 s, respectively. Four logic states were clearly distinguishable in our multi-level memory, and its data could be programmed or erased many times. The multi-level memory effect in our OFETs is ascribed to the electron-trapping ability of the Li+@C60 layer. © 2017 Elsevier B.V. | * |
dc.language | English | * |
dc.publisher | Elsevier B.V. | * |
dc.subject | Electron trapping | * |
dc.subject | Lithium-ion-encapsulated fullerene | * |
dc.subject | Multi-level non-volatile organic memory | * |
dc.title | Multi-level non-volatile organic transistor-based memory using lithium-ion-encapsulated fullerene as a charge trapping layer | * |
dc.type | Article | * |
dc.relation.volume | 45 | * |
dc.relation.index | SCIE | * |
dc.relation.index | SCOPUS | * |
dc.relation.startpage | 234 | * |
dc.relation.lastpage | 239 | * |
dc.relation.journaltitle | Organic Electronics: physics, materials, applications | * |
dc.identifier.doi | 10.1016/j.orgel.2017.03.018 | * |
dc.identifier.wosid | WOS:000401042600033 | * |
dc.identifier.scopusid | 2-s2.0-85016135858 | * |
dc.author.google | Tran C.M. | * |
dc.author.google | Sakai H. | * |
dc.author.google | Kawashima Y. | * |
dc.author.google | Ohkubo K. | * |
dc.author.google | Fukuzumi S. | * |
dc.author.google | Murata H. | * |
dc.contributor.scopusid | Shunichi Fukuzumi(35430038100;58409757400) | * |
dc.date.modifydate | 20240401081001 | * |