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Superhydrophobic modification of gate dielectrics for densely packed pentacene thin film transistors

Title
Superhydrophobic modification of gate dielectrics for densely packed pentacene thin film transistors
Authors
Kim C.S.Jo S.J.Kim J.B.Ryu S.Y.Noh J.H.Baik H.K.Lee S.J.Kim Y.S.
Ewha Authors
김연상
Issue Date
2007
Journal Title
Applied Physics Letters
ISSN
0003-6951JCR Link
Citation
vol. 91, no. 6
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
Pentacene organic thin film transistors (OTFTs) with low- k and high- k hybrid gate dielectrics by C F4 plasma treatment exhibited excellent device performance with field effect mobilities (maximum 1.41 cm2 V s), a low threshold voltage of +1 V, and on/off current ratios of 105 at -5 V gate bias. After C F4 plasma treatment, fluorine atoms diffuse into the interior low- k polymer and eliminate ionic impurities which reduce the leakage current density and overall pentacene initial growth on the superhydrophobic surface is significantly improved. It seems apparent that proper surface treatment is desirable for higher quality pentacene film and improving the performance of OTFTs. © 2007 American Institute of Physics.
DOI
10.1063/1.2767779
Appears in Collections:
자연과학대학 > 화학·나노과학전공 > Journal papers
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