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A fully wafer-level packaged RF MEMS switch with low actuation voltage using a piezoelectric actuator

A fully wafer-level packaged RF MEMS switch with low actuation voltage using a piezoelectric actuator
Park J.-H.Lee H.-C.Park Y.-H.Kim Y.-D.Ji C.-H.Bu J.Nam H.-J.
Ewha Authors
Issue Date
Journal Title
Journal of Micromechanics and Microengineering
0960-1317JCR Link
vol. 16, no. 11, pp. 2281 - 2286
In this paper, a fully wafer-level packaged RF MEMS switch has been demonstrated, which has low operation voltage, using a piezoelectric actuator. The piezoelectric actuator was designed to operate at low actuation voltage for application to advanced mobile handsets. The dc contact type RF switch was packaged using the wafer-level bonding process. The CPW transmission lines and piezoelectric actuators have been fabricated on separate wafers and assembled together by the wafer-level eutectic bonding process. A gold and tin composite was used for eutectic bonding at a low temperature of 300 °C. Via holes interconnecting the electrical contact pads through the wafer were filled completely with electroplated copper. The fully wafer-level packaged RF MEMS switch showed an insertion loss of 0.63 dB and an isolation of 26.4 dB at 5 GHz. The actuation voltage of the switch was 5 V. The resonant frequency of the piezoelectric actuator was 38.4 kHz and the spring constant of the actuator was calculated to be 9.6 N m -1. The size of the packaged SPST (single-pole single-through) switch was 1.2 mm × 1.2 mm including the packaging sealing rim. The effect of the proposed package structure on the RF performance was characterized with a device having CPW through lines and vertical feed lines excluding the RF switches. The measured packaging loss was 0.2 dB and the return loss was 33.6 dB at 5 GHz. © 2006 IOP Publishing Ltd.
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