Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박재형 | - |
dc.date.accessioned | 2017-02-15T08:02:42Z | - |
dc.date.available | 2017-02-15T08:02:42Z | - |
dc.date.issued | 2006 | - |
dc.identifier.issn | 0960-1317 | - |
dc.identifier.other | OAK-3664 | - |
dc.identifier.uri | https://dspace.ewha.ac.kr/handle/2015.oak/234160 | - |
dc.description.abstract | In this paper, a fully wafer-level packaged RF MEMS switch has been demonstrated, which has low operation voltage, using a piezoelectric actuator. The piezoelectric actuator was designed to operate at low actuation voltage for application to advanced mobile handsets. The dc contact type RF switch was packaged using the wafer-level bonding process. The CPW transmission lines and piezoelectric actuators have been fabricated on separate wafers and assembled together by the wafer-level eutectic bonding process. A gold and tin composite was used for eutectic bonding at a low temperature of 300 °C. Via holes interconnecting the electrical contact pads through the wafer were filled completely with electroplated copper. The fully wafer-level packaged RF MEMS switch showed an insertion loss of 0.63 dB and an isolation of 26.4 dB at 5 GHz. The actuation voltage of the switch was 5 V. The resonant frequency of the piezoelectric actuator was 38.4 kHz and the spring constant of the actuator was calculated to be 9.6 N m -1. The size of the packaged SPST (single-pole single-through) switch was 1.2 mm × 1.2 mm including the packaging sealing rim. The effect of the proposed package structure on the RF performance was characterized with a device having CPW through lines and vertical feed lines excluding the RF switches. The measured packaging loss was 0.2 dB and the return loss was 33.6 dB at 5 GHz. © 2006 IOP Publishing Ltd. | - |
dc.language | English | - |
dc.title | A fully wafer-level packaged RF MEMS switch with low actuation voltage using a piezoelectric actuator | - |
dc.type | Article | - |
dc.relation.issue | 11 | - |
dc.relation.volume | 16 | - |
dc.relation.index | SCI | - |
dc.relation.index | SCIE | - |
dc.relation.index | SCOPUS | - |
dc.relation.startpage | 2281 | - |
dc.relation.lastpage | 2286 | - |
dc.relation.journaltitle | Journal of Micromechanics and Microengineering | - |
dc.identifier.doi | 10.1088/0960-1317/16/11/005 | - |
dc.identifier.wosid | WOS:000242169500005 | - |
dc.identifier.scopusid | 2-s2.0-33750576444 | - |
dc.author.google | Park J.-H. | - |
dc.author.google | Lee H.-C. | - |
dc.author.google | Park Y.-H. | - |
dc.author.google | Kim Y.-D. | - |
dc.author.google | Ji C.-H. | - |
dc.author.google | Bu J. | - |
dc.author.google | Nam H.-J. | - |
dc.date.modifydate | 20200911081002 | - |