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Influence of carrier injection on resistive switching of TiO2 thin films with Pt electrodes

Title
Influence of carrier injection on resistive switching of TiO2 thin films with Pt electrodes
Authors
Kim K.M.Choi B.J.Jeong D.S.Hwang C.S.Han S.
Ewha Authors
한승우
Issue Date
2006
Journal Title
Applied Physics Letters
ISSN
0003-6951JCR Link
Citation
vol. 89, no. 16
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
The influence of electron injection on the electric-pulse-induced resistive switching of PtTi O2 thin film/Pt structure was studied by current-voltage (I-V) measurements. The electron injection was increased by annealing the sample in a N2 atmosphere or measuring the I-V characteristics at high temperatures (<100 °C). The switching from the high-resistance state (HRS) to the low-resistance state by a filamentary mechanism was suppressed when the carrier injection by Schottky emission or space-charge-limited conduction (SCLC) was excessive. Interfacial potential barrier played a crucial role in determining the carrier injection. Switching was observed (not observed) when the HRS resistance was low (high) although SCLC was observed. © 2006 American Institute of Physics.
DOI
10.1063/1.2361268
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자연과학대학 > 물리학전공 > Journal papers
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