Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 한승우 | - |
dc.date.accessioned | 2017-02-15T08:02:37Z | - |
dc.date.available | 2017-02-15T08:02:37Z | - |
dc.date.issued | 2006 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | OAK-3606 | - |
dc.identifier.uri | https://dspace.ewha.ac.kr/handle/2015.oak/234136 | - |
dc.description.abstract | The influence of electron injection on the electric-pulse-induced resistive switching of PtTi O2 thin film/Pt structure was studied by current-voltage (I-V) measurements. The electron injection was increased by annealing the sample in a N2 atmosphere or measuring the I-V characteristics at high temperatures (<100 °C). The switching from the high-resistance state (HRS) to the low-resistance state by a filamentary mechanism was suppressed when the carrier injection by Schottky emission or space-charge-limited conduction (SCLC) was excessive. Interfacial potential barrier played a crucial role in determining the carrier injection. Switching was observed (not observed) when the HRS resistance was low (high) although SCLC was observed. © 2006 American Institute of Physics. | - |
dc.language | English | - |
dc.title | Influence of carrier injection on resistive switching of TiO2 thin films with Pt electrodes | - |
dc.type | Article | - |
dc.relation.issue | 16 | - |
dc.relation.volume | 89 | - |
dc.relation.index | SCI | - |
dc.relation.index | SCIE | - |
dc.relation.index | SCOPUS | - |
dc.relation.journaltitle | Applied Physics Letters | - |
dc.identifier.doi | 10.1063/1.2361268 | - |
dc.identifier.wosid | WOS:000241405200079 | - |
dc.identifier.scopusid | 2-s2.0-33750187879 | - |
dc.author.google | Kim K.M. | - |
dc.author.google | Choi B.J. | - |
dc.author.google | Jeong D.S. | - |
dc.author.google | Hwang C.S. | - |
dc.author.google | Han S. | - |
dc.contributor.scopusid | 한승우(55557541900) | - |
dc.date.modifydate | 20211210152321 | - |