View : 103 Download: 109

Pentacene and ZnO hybrid channels for complementary thin-film transistor inverters operating at 2 v

Title
Pentacene and ZnO hybrid channels for complementary thin-film transistor inverters operating at 2 v
Authors
Oh M.S.Hwang D.K.Lee K.Choi W.J.Kim J.H.Im S.Lee S.
Ewha Authors
이승준
SCOPUS Author ID
이승준scopus
Issue Date
2007
Journal Title
Journal of Applied Physics
ISSN
0021-8979JCR Link
Citation
vol. 102, no. 7
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
We report on the fabrication of complementary thin-film transistor (TFT) inverter with organic-inorganic hybrid channels. By adopting organic-pentacene p channel and inorganic-ZnO n channel, we have fabricated a model device of hybrid complementary TFT inverters at a low channel deposition temperature below 100 °C. Although those p and n channels were deposited on high-temperature-processed thin gate oxide/ p-Si here, our complementary device demonstrated good potentials toward air-stable logic applications, operating with an excellent voltage gain of ∼26 at 2 V as well as with a dynamic response of ∼10 ms. © 2007 American Institute of Physics.
DOI
10.1063/1.2785852
Appears in Collections:
엘텍공과대학 > 전자공학과 > Journal papers
Files in This Item:
pentacene.pdf(481.56 kB)Download
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE