Pentacene and ZnO hybrid channels for complementary thin-film transistor inverters operating at 2 v

Abstract

We report on the fabrication of complementary thin-film transistor (TFT) inverter with organic-inorganic hybrid channels. By adopting organic-pentacene p channel and inorganic-ZnO n channel, we have fabricated a model device of hybrid complementary TFT inverters at a low channel deposition temperature below 100 °C. Although those p and n channels were deposited on high-temperature-processed thin gate oxide/ p-Si here, our complementary device demonstrated good potentials toward air-stable logic applications, operating with an excellent voltage gain of ∼26 at 2 V as well as with a dynamic response of ∼10 ms. © 2007 American Institute of Physics.