Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 이승준 | * |
dc.date.accessioned | 2017-01-18T02:01:33Z | - |
dc.date.available | 2017-01-18T02:01:33Z | - |
dc.date.issued | 2007 | * |
dc.identifier.issn | 0021-8979 | * |
dc.identifier.other | OAK-4338 | * |
dc.identifier.uri | https://dspace.ewha.ac.kr/handle/2015.oak/233994 | - |
dc.description.abstract | We report on the fabrication of complementary thin-film transistor (TFT) inverter with organic-inorganic hybrid channels. By adopting organic-pentacene p channel and inorganic-ZnO n channel, we have fabricated a model device of hybrid complementary TFT inverters at a low channel deposition temperature below 100 °C. Although those p and n channels were deposited on high-temperature-processed thin gate oxide/ p-Si here, our complementary device demonstrated good potentials toward air-stable logic applications, operating with an excellent voltage gain of ∼26 at 2 V as well as with a dynamic response of ∼10 ms. © 2007 American Institute of Physics. | * |
dc.language | English | * |
dc.title | Pentacene and ZnO hybrid channels for complementary thin-film transistor inverters operating at 2 v | * |
dc.type | Article | * |
dc.relation.issue | 7 | * |
dc.relation.volume | 102 | * |
dc.relation.index | SCI | * |
dc.relation.index | SCIE | * |
dc.relation.index | SCOPUS | * |
dc.relation.journaltitle | Journal of Applied Physics | * |
dc.identifier.doi | 10.1063/1.2785852 | * |
dc.identifier.wosid | WOS:000250147700173 | * |
dc.identifier.scopusid | 2-s2.0-35348858083 | * |
dc.author.google | Oh M.S. | * |
dc.author.google | Hwang D.K. | * |
dc.author.google | Lee K. | * |
dc.author.google | Choi W.J. | * |
dc.author.google | Kim J.H. | * |
dc.author.google | Im S. | * |
dc.author.google | Lee S. | * |
dc.contributor.scopusid | 이승준(36064894500;57207064952) | * |
dc.date.modifydate | 20240322125312 | * |