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The properties of ZnO photoluminescence at and above room temperature

Title
The properties of ZnO photoluminescence at and above room temperature
Authors
Chen X.-B.Huso J.Morrison J.L.Bergman L.
Ewha Authors
Xiang Bai Chen
Issue Date
2007
Journal Title
Journal of Applied Physics
ISSN
0021-8979JCR Link
Citation
vol. 102, no. 11
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
A study of the photoluminescence characteristics of a ZnO single crystal at the temperature range 173-823 K is presented. The analysis employed the electron-phonon interaction model as well as the radiative recombination rate model. Both studies indicate that at ∼700 K the photoluminescence character undergoes a transition from being a free exciton emission to a band gap recombination, implying a breakup of excitons into free carriers is occurring. The transition temperature corresponds to ∼60 meV, which is consistent with the binding energy of the free exciton in ZnO. © 2007 American Institute of Physics.
DOI
10.1063/1.2822156
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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