Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Xiang Bai Chen | - |
dc.date.accessioned | 2017-01-18T02:01:26Z | - |
dc.date.available | 2017-01-18T02:01:26Z | - |
dc.date.issued | 2007 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.other | OAK-4477 | - |
dc.identifier.uri | https://dspace.ewha.ac.kr/handle/2015.oak/233926 | - |
dc.description.abstract | A study of the photoluminescence characteristics of a ZnO single crystal at the temperature range 173-823 K is presented. The analysis employed the electron-phonon interaction model as well as the radiative recombination rate model. Both studies indicate that at ∼700 K the photoluminescence character undergoes a transition from being a free exciton emission to a band gap recombination, implying a breakup of excitons into free carriers is occurring. The transition temperature corresponds to ∼60 meV, which is consistent with the binding energy of the free exciton in ZnO. © 2007 American Institute of Physics. | - |
dc.language | English | - |
dc.title | The properties of ZnO photoluminescence at and above room temperature | - |
dc.type | Article | - |
dc.relation.issue | 11 | - |
dc.relation.volume | 102 | - |
dc.relation.index | SCI | - |
dc.relation.index | SCIE | - |
dc.relation.index | SCOPUS | - |
dc.relation.journaltitle | Journal of Applied Physics | - |
dc.identifier.doi | 10.1063/1.2822156 | - |
dc.identifier.wosid | WOS:000251678800141 | - |
dc.identifier.scopusid | 2-s2.0-37149031864 | - |
dc.author.google | Chen X.-B. | - |
dc.author.google | Huso J. | - |
dc.author.google | Morrison J.L. | - |
dc.author.google | Bergman L. | - |
dc.contributor.scopusid | Xiang Bai Chen(8454345800) | - |
dc.date.modifydate | 20211210152621 | - |