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Role of structural defects in the unipolar resistive switching characteristics of PtNiOPt structures

Title
Role of structural defects in the unipolar resistive switching characteristics of PtNiOPt structures
Authors
Park C.Jeon S.H.Chae S.C.Han S.Park B.H.Seo S.Kim D.-W.
Ewha Authors
한승우김동욱
SCOPUS Author ID
김동욱scopus
Issue Date
2008
Journal Title
Applied Physics Letters
ISSN
0003-6951JCR Link
Citation
vol. 93, no. 4
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
We investigated the resistive switching characteristics of two types of PtNiOPt structures with epitaxial and polycrystalline NiO layers. Both of these PtNiOPt structures exhibited unipolar resistive switching. Pt/epitaxial- NiOPt showed unstable switching or no resistance state change after several repeated runs. Pt/polycrystalline- NiOPt showed very reproducible switching. The experimental data indicated that microstructural defects (e.g., grain boundaries) played crucial roles in the reliability of the unipolar resistive switching behavior. This was further supported by first-principles calculations. © 2008 American Institute of Physics.
DOI
10.1063/1.2963983
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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