DSpace at EWHA: Role of structural defects in the unipolar resistive switching characteristics of PtNiOPt structures

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DC Field	Value	Language
dc.contributor.author	한승우	*
dc.contributor.author	김동욱	*
dc.date.accessioned	2016-12-06T02:12:27Z	-
dc.date.available	2016-12-06T02:12:27Z	-
dc.date.issued	2008	*
dc.identifier.issn	0003-6951	*
dc.identifier.other	OAK-4988	*
dc.identifier.uri	https://dspace.ewha.ac.kr/handle/2015.oak/233035	-
dc.description.abstract	We investigated the resistive switching characteristics of two types of PtNiOPt structures with epitaxial and polycrystalline NiO layers. Both of these PtNiOPt structures exhibited unipolar resistive switching. Pt/epitaxial- NiOPt showed unstable switching or no resistance state change after several repeated runs. Pt/polycrystalline- NiOPt showed very reproducible switching. The experimental data indicated that microstructural defects (e.g., grain boundaries) played crucial roles in the reliability of the unipolar resistive switching behavior. This was further supported by first-principles calculations. © 2008 American Institute of Physics.	*
dc.language	English	*
dc.title	Role of structural defects in the unipolar resistive switching characteristics of PtNiOPt structures	*
dc.type	Article	*
dc.relation.issue	4	*
dc.relation.volume	93	*
dc.relation.index	SCI	*
dc.relation.index	SCIE	*
dc.relation.index	SCOPUS	*
dc.relation.journaltitle	Applied Physics Letters	*
dc.identifier.doi	10.1063/1.2963983	*
dc.identifier.wosid	WOS:000258179800044	*
dc.identifier.scopusid	2-s2.0-49149126998	*
dc.author.google	Park C.	*
dc.author.google	Jeon S.H.	*
dc.author.google	Chae S.C.	*
dc.author.google	Han S.	*
dc.author.google	Park B.H.	*
dc.author.google	Seo S.	*
dc.author.google	Kim D.-W.	*
dc.contributor.scopusid	한승우(55557541900)	*
dc.contributor.scopusid	김동욱(57203350633)	*
dc.date.modifydate	20240123114549	*