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Surface property controllable multilayered gate dielectric for low voltage organic thin film transistors

Title
Surface property controllable multilayered gate dielectric for low voltage organic thin film transistors
Authors
Jo S.J.Kim C.S.Kim J.B.Kim J.Lee M.J.Hwang H.S.Baik H.K.Kim Y.S.
Ewha Authors
김연상
SCOPUS Author ID
김연상scopus
Issue Date
2008
Journal Title
Applied Physics Letters
ISSN
0003-6951JCR Link
Citation
Applied Physics Letters vol. 93, no. 8
Indexed
SCI; SCIE; SCOPUS WOS scopus
Document Type
Article
Abstract
We report the effects of dielectric surface properties on the device performance of organic thin film transistors (OTFTs) using polymer/high- k oxide multilayered gate dielectrics. We systematically controlled the surface energy of the gate dielectric from very hydrophobic to very hydrophilic. The modified dielectric surface strongly affected the initial growth mechanism of pentacene and subsequently the performance of the OTFTs. The performance of the OTFTs with a higher surface energy was superior to that of the OTFTs with a lower surface energy. © 2008 American Institute of Physics.
DOI
10.1063/1.2973160
Appears in Collections:
자연과학대학 > 화학·나노과학전공 > Journal papers
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