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Non-Volatile ReRAM Devices Based on Self-Assembled Multilayers of Modified Graphene Oxide 2D Nanosheets

Title
Non-Volatile ReRAM Devices Based on Self-Assembled Multilayers of Modified Graphene Oxide 2D Nanosheets
Authors
Rani A.Velusamy D.B.Kim R.H.Chung K.Mota F.M.Park C.Kim D.H.
Ewha Authors
김동하
SCOPUS Author ID
김동하scopus
Issue Date
2016
Journal Title
Small
ISSN
1613-6810JCR Link
Citation
vol. 12, no. 44, pp. 6167 - 6174
Keywords
2D nanosheet multilayersgraphene oxidelayer-by-layer self-assemblyresistive random access memory
Publisher
Wiley-VCH Verlag
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
2D nanomaterials have been actively utilized in non-volatile resistive switching random access memory (ReRAM) devices due to their high flexibility, 3D-stacking capability, simple structure, transparency, easy fabrication, and low cost. Herein, it demonstrates re-writable, bistable, transparent, and flexible solution-processed crossbar ReRAM devices utilizing graphene oxide (GO) based multilayers as active dielectric layers. The devices employ single- or multi-component-based multilayers composed of positively charged GO (N-GO(+) or NS-GO(+)) with/without negatively charged GO(-) using layer-by-layer assembly method, sandwiched between Al bottom and Au top electrodes. The device based on the multi-component active layer Au/[N-GO(+)/GO(-)]n/Al/PES shows higher ON/OFF ratio of ≈105 with switching voltage of −1.9 V and higher retention stability (≈104 s), whereas the device based on single component (Au/[N-GO(+)]n/Al/PES) shows ≈103 ON/OFF ratio at ±3.5 V switching voltage. The superior ReRAM properties of the multi-component-based device are attributed to a higher coating surface roughness. The Au/[N-GO(+)/GO(–)]n/Al/PES device prepared from lower GO concentration (0.01%) exhibits higher ON/OFF ratio (≈109) at switching voltage of ±2.0 V. However, better stability is achieved by increasing the concentration from 0.01% to 0.05% of all GO-based solutions. It is found that the devices containing MnO2 in the dielectric layer do not improve the ReRAM performance. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
DOI
10.1002/smll.201602276
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자연과학대학 > 화학·나노과학전공 > Journal papers
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